Saelig Company, Inc. has announced availability of the CLIPPER CLP1500V15A1, an oscilloscope adapter that allows small voltages to be measured in the presence of very high voltages, such as those ...

NXP Semiconductors N.V. announced the industry’s first medium power transistors in a 2-mm x 2-mm 3-pin leadless DFN package. Offering a unique solution in an ultra-small DFN2020-3 (SOT1061) ...

Herein, wafer-scale 8-nm films of Sn-doped gallium oxide (Ga 2 O 3) were fabricated via physical vapor deposition at room temperature. Using these films, 8-nm Sn-doped Ga 2 O 3 field-effect ...

Researchers at the Indian Institute of Science (IISc) have uncovered fundamental insights into designing gallium nitride (GaN ...

A tough challenge for test engineers is explored in terms of test methods, pitfalls, and measurement errors. For the test engineer, RF and microwave power amplifier testing imposes unique challenges.

Scientists from France’s CEA-Ines developed a 400 W micro-inverter with a power density of 1.1 kW/L and an efficiency of 97%. The device utilizes GaN 600V diodes and power transistors developed by CEA ...

Integrated circuit (IC) sizes continue to grow as they meet the compute requirements of cutting-edge applications such as artificial intelligence (AI), autonomous driving, and data centers. As design ...

PLANO, Texas, December 17, 2025--(BUSINESS WIRE)--Diodes Incorporated (Diodes) (Nasdaq: DIOD) today announces an expansion of its automotive-compliant* bipolar transistor portfolio with the ...

Semiconducting CNTs possess several advantages over traditional silicon, including higher carrier mobility and better electrostatic control at nanoscale dimensions. These properties make them ...