Helios will be leveraging Galaxy's Hyperdrive platform to provide epitaxy tool owners with unprecedented data insights and tool optimization capabilities. Together, we are empowering semiconductor ...

“The 401M sets a new benchmark in speed, accuracy and repeatability,” said Dhaval Dhayatkar, Advanced Energy’s vice president, Critical Sensing and Control, System Power. “By providing reliable, ...

College of Engineering at Seoul National University announced that a research team led by Professor Gwan-Hyoung Lee from the Department of Materials Science and Engineering, in collaboration with the ...

PLAINVIEW, N.Y., Nov. 05, 2025 (GLOBE NEWSWIRE) -- Veeco Instruments Inc. (VECO) announced today receipt of an order for a Propel®300 system from a major power semiconductor integrated device ...

Over on ScienceDaily we learn that an international team of scientists have turned a common semiconductor germanium into a superconductor. Researchers have been able to make the semiconductor ...

Researchers introduce the hypotaxy technique for growth of wafer-scale single-crystal 2D semiconductors, overcoming the limitations of existing processes. (Nanowerk News) College of Engineering at ...

Gallium nitride (GaN) has emerged as a key semiconductor in the evolution of power electronics thanks to its wide bandgap, high critical electric field and superior carrier mobility. Recent advances ...

--(BUSINESS WIRE)--Atomera Incorporated (Nasdaq: ATOM): Room 320 (Level 3, Hawaii Convention Center), Honolulu, HI Robert J. Mears, CTO and Founder of Atomera will present a paper on the advanced ...

Researchers from Huazhong University of Science and Technology and Hebei University have optimized the nucleation process by regulating the interactions between the epitaxial layer and the substrate.

Researchers at Forschungszentrum Jülich and the Leibniz Institute for Innovative Microelectronics (IHP) have developed a material that has never existed before: a stable alloy of carbon, silicon, ...

Surface-emitting semiconductor lasers represent a class of devices in which the optical emission is perpendicular to the semiconductor wafer. This design contrasts with conventional edge-emitting ...