Electronic Design

SiC MOSFETs: Challenges in Transportation Electrification

Wide-bandgap (WBG) technologies, such as gallium-nitride (GaN) devices and silicon-carbide (SiC) MOSFETs, have recently made their way to electrified powertrain (e-powertrain) applications. These ...
EDN

Single-Channel SiC MOSFET and IGBT Gate Driver with Advanced Active Clamping and Reinforced Isolation for Automotive Applications

SIC1181KQ and SIC1182KQ are single-channel gate drivers for SiC MOSFETs. Reinforced galvanic isolation is provided by Power Integrations’ revolutionary solid insulator FluxLink technology. Up to ±8-A ...
Semiconductor Engineering

Short-Circuit Ruggedness In SiC MOSFETs

Trench-based silicon carbide power MOSFETs (Metal-Oxide-Semiconductor Field-Effect Transistors) represent a dramatic improvement in the Figure of Merit (FOM) values of power conversion switching ...
WTNH

STMicroelectronics' advanced galvanically isolated gate drivers feature flexible protection for IGBTs and SiC MOSFETs

GENEVA, SWITZERLAND, November 7, 2024 /EINPresswire.com/ -- STMicroelectronics’ STGAP3S family of gate drivers for silicon-carbide (SiC) and IGBT power switches ...
Semiconductor Engineering

Driving Toward More Rugged, Less Expensive SiC

Silicon carbide is gaining traction in the power semiconductor market, particularly in electrified vehicles, but it’s still too expensive for many applications. The reasons are well understood, but ...
EDN

SiC power devices on full display at PCIM Europe

PCIM Europe, an international exhibition and conference for power electronics and its applications, hosted 515 exhibitors, 300 tutorials and workshops, and 107 forum presentations at this week’s show ...
Electrical Construction & Maintenance

Stumped by the Code? Placement of Overcurrent Protection Devices

All questions and answers are based on the 2017 NEC. Q. Per the NEC, overcurrent protection devices must be placed at what location in branch-circuit or feeder conductors? A. Except as permitted by ...