Light-controlled nonvolatile charge memory. Left: schematic of the memory device. Right: the optical-controlled writing and erasing process of source-drain current. (Courtesy: J. Phys. D: Appl. Phys.

Amorphous oxide semiconductors like IGZO (indium gallium zinc oxide) offer acceptable carrier mobility with very low leakage.

Researchers scientists have unlocked a new realm of possibilities for non-volatile phase change memory, a type of electronic memory capable of retaining data even without power. Traditionally, ...

A significant milestone has been reached in the advancement of non-volatile phase change memory, a form of electronic memory capable of retaining data even when power is disconnected, in a material ...

For several decades, NAND flash has been the primary technology for low-cost and large-density data storage applications. This non-volatile memory is present in all major electronic end-use markets, ...

Non-volatile memory is becoming more complicated at advanced nodes, where price, speed, power and utilization are feeding into some very application-specific tradeoffs about where to place that memory ...

The MB85R256H is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 32,768 words x 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming ...