Digital Storage And Memory Projections For 2026, Part 2

AI is driving demand and higher prices for DRAM and NAND into 2026.  Products using non-volatile memories to replace NOR and ...
PC Gamer

Memory crisis and sky-high DRAM prices could run past 2028 as Samsung and SK Hynix opt to 'minimize the risk of oversupply'

Brace yourself for the latest update to the memory supply crisis. And it's not good news. Not at all. Samsung and SK Hynix, who together are responsible for 70% of the DRAM market, have signalled ...

China's CXMT eyes $4.2 billion Shanghai listing to fund DRAM expansion

China's leading maker of DRAM chips, ChangXin Memory Technologies (CXMT) Corp, said on Tuesday it plans to raise 29.5 billion ...
Electronic Design

Understanding Memory’s RowHammer Challenge

Why we need DDR5. Security improvements of DDR5 over DDR4. How RowHammer can be thwarted. Rapid growth in the world’s digital information has driven continued improvements in computing to process, ...
TweakTown

DDR5 memory costs double as DRAM prices surge by 171.8% year over year

TL;DR: DRAM contract prices surged 171.8% year-over-year in Q3 2025, driven by high demand from AI, cloud, and data centers amid supply shortages. DDR5 memory costs have doubled, with Korean ...

ASUS Responds To Rumors It Will Make DRAM To Alleviate The Memory Crisis

Reports suggest ASUS is toying with the idea of making its own DRAM chip production line to serve the consumer market, but that is unlikely to happen.
TechSpot

Persistent memory will replace DRAM in 2030 at the earliest, experts say

The big picture: Persistent memory has long been anticipated to bring a paradigm shift in computing, but it's unlikely to happen anytime soon. In a recent webinar, industry insiders from the Storage ...
EDN

The promise of OTS-only memories for next-gen compute

For several decades, the semiconductor industry has been looking for alternative memory technologies to fill the gap between dynamic random-access memory (DRAM), the compute system’s main memory, and ...
EDN

0.4-V DRAM array technology using twin cells for next generation mobile devices

Hitachi, Ltd. (NYSE: HIT / TSE: 6501) in cooperation with Elpida Memory, Inc. (TSE: 6665), have proposed a new DRAM(*1) circuit design enabling 0.4-V operation. The proposed array employs a twin cell ...
tom's Hardware on MSN

SanDisk's new High Bandwidth Flash memory enables 4TB of VRAM on GPUs, matches HBM bandwidth at higher capacity

SanDisk on Wednesday introduced an interesting new memory that could wed the capacity of 3D NAND and the extreme bandwidth enabled by high bandwidth memory (HBM). SanDisk's high-bandwidth flash (HBF) ...