The previous columns in this series discussed the benefits of eGaN® FETs and their potential to achieve higher efficiencies and higher switching speeds than possible with silicon MOSFETs. This ...
Last evening, I attended a seminar given by Bruce Archambeault, an IBM distinguished engineer and overall EMC authority. His topic, “PCB Decoupling for Effective Power Integrity and EMI control” sheds ...
1. Synchronous buck converter with parasitic inductances. It has been previously demonstrated that the chip-scale packaging of high-voltage lateral eGaN FETs have extraordinarily small parasitic ...
Gallium nitride (GaN) is an ideal material for applications requiring high switching speeds and minimal power losses. While ...
Our 1ED44173/5/6 are the new low side gate driver ICs that integrate over-current protection (OCP), FAULT status output and enable function. This high integration level is excellent for the digitally ...
Placement of regulators for core voltage levels closer to the chips that need them Usage of unique materials like ECMs in PCBs and packages to provide power rail capacitance Package-level and ...
Some results have been hidden because they may be inaccessible to you
Show inaccessible results