Electronic Design

GaN-Based Power Device Signals Next-Gen Power Conversion

International Rectifier Corp. has successfully developed a GaN-based (gallium-nitride) power-device technology platform. It’s expected to provide improvements in two key application-specific figures ...
Electronic Design

Moving on to GaN Switches in Switch-Mode Power Supplies

GaN switches promise higher efficiency and higher power density in SMPS. This article discusses the readiness of this technology and its challenges, and provides an outlook on being a replacement for ...
Semiconductor Engineering

Enabling New Applications With SiC IGBT And GaN HEMT For Power Module Design

The need to mitigate climate change is driving a need to electrify our infrastructure, vehicles, and appliances, which can then be charged and powered by renewable energy sources. The most visible and ...
Business Wire

New Application Interface Boards From Cambridge GaN Devices Enable Users to Try ICeGaN ICs in Existing Designs Without PCB Re-layout

CAMBRIDGE, England--(BUSINESS WIRE)--Cambridge GaN Devices (CGD), the fabless, clean-tech semiconductor company that develops a range of energy-efficient GaN-based power devices to make greener ...
EDN

Analysis on High-Voltage Power Device Package Design

Renewable-energy applications, as well as all kinds of energy-efficiency technologies, require reliable, compact, and thermal-efficient power devices. For driving innovation in wind turbines, smart ...
Business Wire

Transphorm’s TOLL FETs Position GaN as Optimal Devices for Power Hungry AI Applications

GOLETA, Calif.--(BUSINESS WIRE)--Transphorm, Inc. (Nasdaq: TGAN), a global leader in robust GaN power semiconductors, the future of next generation power systems, today introduced three SuperGaN® FETs ...
Morningstar

Beneq Transform® Qualified for GaN Power Device Production by Tier 1 Asian Manufacturer

ESPOO, Finland, May 1, 2025 /PRNewswire/ -- Beneq announces that its Transform ALD cluster tool has been qualified for volume production of GaN-based power devices on 8'' GaN-on-Si wafers by a Tier 1 ...
EDN

The next GaN design frontier: EMI control

A new gallium nitride (GaN) power IC claims to further simplify and speed the development of small form factor, high-power-density applications by offering greater integration and thermal performance.
Just Auto

ROHM and TSMC collaborate on GaN power devices for EV market

The collaboration merges ROHM’s device development expertise with TSMC’s advanced GaN-on-silicon technology. Credit: ROHM/Globenewswire. ROHM has entered a strategic partnership with Taiwan ...
New Electronics

onsemi and Innoscience to accelerate GaN power technology adoption

onsemi and Innoscience have signed a memorandum of understanding (MoU) to explore opportunities for speeding up the deployment of gallium nitride (GaN) power devices. Companies look to accelerate ...
Design-Reuse

onsemi to Develop Next-Generation GaN Power Devices with GlobalFoundries

onsemi (Nasdaq: ON) today announced it has signed a collaboration agreement with GlobalFoundries (Nasdaq: GFS) (GF) to develop and manufacture advanced gallium nitride (GaN) power products using GF’s ...