MOUNTAIN VIEW, Calif., May 13, 2013-- Synopsys, Inc. (Nasdaq: SNPS), a global leader providing software, IP and services used to accelerate innovation in chips and electronic systems, today announced ...
As the dimensions of devices scale down, the variations in the electrical parameters of CMOS transistors steadily increase. This is due to random fluctuations in the density of the dopants in the ...
Yield and cost have always been critical factors for both manufacturers and designers of semiconductor products. It is a continuous challenge to meet targets of both yield and cost, due to new device ...
Reducing the parasitic capacitance between the gate metal and the source/drain contact of a transistor can decrease device switching delays. One way to reduce parasitic capacitance is to reduce the ...
Imec has unveiled another pioneering design – the nanowell FET. Building upon traditional FinFET principles, this innovation introduces an additional well in the nanowire that further enhances the ...
Stating that not all FinFETs are created equal, Samsung Electronics Co., Ltd., a global leader in advanced semiconductor solutions, today announced that the IP and design enablement ecosystem for its ...
Ready to nerd out? Great. Globalfoundries has rolled out details surrounding its new FinFET transistor architecture, which is engineered specifically with mobile devices in mind. No real surprise, ...
SAN JOSE, Calif., 14 Jul 2014 - Cadence Design Systems, Inc. (NASDAQ: CDNS), a leader in global electronic design innovation, today announced that TSMC has certified Cadence Quantus QRC Extraction ...
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