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3D X-DRAM aims for 10x capacity of today's memory — NEO Semiconductor's memory has up to 512 Gb per module
NEO Semiconductor is once again announcing a new technology that hopes to revolutionize the state of DRAM memory. Today, the company unveiled two new 3D X-DRAM cell designs, 1T1C and 3T0C. The ...
SHENZHEN: Huawei is reportedly supporting a large-scale DRAM project in China, aiming to boost local chip production and ...
Huawei is reportedly set to build a 12-inch chip wafer plant in Shenzhen, China, in a bid to ease local pressure from the ...
Flash memory has made incredible capacity strides thanks to monolithic 3D processing enabled by the stacking of more than 200 layers, which is on its way to 1.000 layers in future generations.[1] But ...
NEO Semiconductor announced on April 23rd that its 3D X-DRAM technology has successfully passed proof-of-concept (POC) validation, demonstrating that a new class of high-density DRAM can be ...
TOKYO--(BUSINESS WIRE)--Kioxia Corporation, a world leader in memory solutions, today announced the development of OCTRAM (Oxide-Semiconductor Channel Transistor DRAM), a new type of 4F 2 DRAM, ...
The Roundhill Memory ETF (DRAM) is the most interesting new fund in the semiconductor category. Launched in 2025, it focuses on companies making high-bandwidth memory (HBM) — the specialized chips ...
SAN JOSE, Calif., April 23, 2026 /PRNewswire/ -- NEO Semiconductor, a leading innovator in advanced AI and memory technologies, today announced successful proof-of-concept (POC) results for its 3D ...
TOKYO--(BUSINESS WIRE)--Kioxia Corporation, a world leader in memory solutions, today announced the development of highly stackable oxide-semiconductor channel transistors that will enable the ...
TSMC is reported to be cutting production runs on its mature process nodes as a glut of older chips in the market is putting downward pricing pressure on DDR4. DRAM spot prices are experiencing a ...
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